MT45W1MW16BDGB-701 IT

16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM™ Memory MT45W1MW16BDGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages: – 1.7–1.95V VCC – 1.7–3.6V1 VCCQ • Page mode read access – Sixteen-word page size – Interpage read access: 70ns – Intrapage read access: 20ns • Burst mode write access: continuous burst • Burst mode read access: – 4, 8, or 16 words, or continuous burst – MAX clock rate: 104 MHz (tCLK = 9.62ns) – Burst initial latency: 39ns (4 clocks) @ 104 MHz – tACLK: 7ns @ 104 MHz • Low power consumption – Asynchronous read: